LE25CB643TT-BH: 64 kb SPI CMOS Serial EEPROM
The LE25CB643TT-BH is serial peripheral interface EEPROM (Electrically Erasable and Programmable ROM). This device realizes high speed and a high level reliability by incorporating high performance CMOS EEPROM technology. This device is compatible with SPI memory protocol, therefore it is best suited for application that requires re-writable nonvolatile parameter memory. And this device has 32bytes page write function for high speed data re-write.
特性- Capacity : 64k bits (8k × 8 bits)
- Single supply voltage : 2.7V to 5.5V
- Operating temperature : -40ºC to +85ºC
- Interface : SPI Mode0 and Mode3 correspondence
- Operating clock frequency : 5MHz
- Low Power consumption: Standby : 3μA (max.): Read : 1mA (max.): Write : 3mA (max.)
- Automatic page write mode : 32 Bytes
- Write cycle time : 5ms
- Erase/Write cycles : 106 cycles
- Data Retention : 20 years
- High reliability : Adopts proprietary symmetric memory array configuration (USP6947325)Incorporates a feature to prohibit write operations under low voltage conditions.
| 优势- Wide Operation Voltage
- Low power consumption
- High Reliability
|
应用- Application that requires re-writable nonvolatile parameter memory.
| 终端产品- Consumer, Wireless, PC peripheral, every products require store nonvolatile memory
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数据表 (1)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| LE25CB643TT-BH | Active | Pb-free
Halide free | Micro8™ | 846A-02 | 1 | Tape and Reel | 4000 | $0.536 |
订购产品技术参数
| Product | Type | Density | Organization | Data Transmission Standard | fcycle Max (kHz) | tACC Max ns | VCC Min (V) | VCC Max (V) | Istandby Max (µA) | Iact Max (mA) | T Min (°C) | T Max (°C) |
|---|
| LE25CB643TT-BH | Serial | 64 kb | 8k x 8 | SPI | 5000 | 80 | 2.7 | 5.5 | 3 | 1 | -40 | 85 |
