MBR2515L: 15 V, 25 A Schottky Rectifier
The Schottky Rectifier employs the Schottky Barrier principle in a large metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use in low voltage, high frequency switching power supplies, low voltage converters, O-Ring diodes and polarity protection devices.
特性- Very Low Forward Voltage (0.28 V Maximum @ 19 Amps, 70 C)
- Guardring for Stress Protection
- Highly Stable Oxide Passivated Junction (100 C Operating Junction Temperature)
- Epoxy Meets UL94, VO at 1/8"Mechanical Characteristics:
- Case: Epoxy, Molded
- Weight: 1.9 grams (approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds
- Shipped 50 Units Per Plastic Tube
- Marking: B2515L
- Pb-Free Package is Available
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封装
数据表 (1)
封装图纸 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MBR2515LG | Active | Pb-free | TO-220-2 | 221B-04 | NA | Tube | 50 | $1.5333 |
| MBR2515L | Last Shipments | | TO-220-2 | 221B-04 | NA | Tube | 50 | |
订购产品技术参数
| Product | Configuration | VRRM Min (V) | VF Max (V) | IRM Max (µA) | IO(rec) Max (A) | IFSM Max (A) | trr Max (ns) | Cj Max (pF) |
|---|
| MBR2515LG | Single | 15 | 0.45 | 15000 | 25 | 150 | | |
