MCH6421: Power MOSFET, 20V, 38mΩ, 5.5A, Single N-Channel
This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements.
特性- Low On-Resistance
- High-Speed Switching
- 1.8V drive
- ESD Diode-Protected Gate
- Ultra small Package MCPH6 (2.0mm×2.1mm×0.85mmt)
- Pb-Free and RoHS compliance
- Halogen Free compliance : MCH6421-TL-W
| 优势- Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation
- Reduce Dynamic Power Losses
- Drive at Low Voltage
- ESD Resistance
- Saves Board Space
|
应用- Load Switch
- Synchronous Boost Converter
| 终端产品- Battery Charger
- 充电宝
- English Learning System
|
仿真模型 (1)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| MCH6421-TL-E | Active, Not Rec | Pb-free | SC-88FL / MCPH-6 | 419AS | 1 | Tape and Reel | 3000 | $0.1733 |
| MCH6421-TL-W | Active | Pb-free
Halide free | SC-88FL / MCPH-6 | 419AS | 1 | Tape and Reel | 3000 | $0.1467 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| MCH6421-TL-W | N-Channel | Single | 20 | 12 | 1.3 | 5.5 | 1.5 | 61 | 38 | | 5.1 | | 1.7 | | 410 | 84 | 59 |
