NDPL100N10B: Power MOSFET, 100V, 7.2mΩ, 100A, N-Channel
This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This devices is suitable for applications with low gate charge driving or ultra low on resistance requirements.
特性- Ultra Low On-Resistance
- High Speed Switching
- Low Gate Charge
- 100% Avalanche Tested
- Pb-Free and RoHS Compliance
| 优势- Improves Efficiency by Reducing Conduction Losses
- Reduces Dynamic Power Losses
- Ease of Drive, Faster Turn-On
- Voltage Overstress Safeguard
- Environment Friendliness
|
应用- Battery Protection
- Motor Drive
- Primary Side Switch
- Secondary Side Synchronous Rectification
| 终端产品- Multi-Cells Battery Pack (ESS, E-Bike, P-Tool)
- Other Motor
- Power Supply
|
仿真模型 (1)
封装图纸 (1)
数据表 (1)
产品订购型号
| 产品 | 状况 | Compliance | 封装 | MSL* | 容器 | 预算价格 (1千个数量的单价） |
|---|
| NDPL100N10BG | Active | Pb-free | TO-220-3L | 221AU | NA | Tube | 50 | $0.8042 |
订购产品技术参数
| Product | Channel Polarity | Configuration | V(BR)DSS Min (V) | VGS Max (V) | VGS(th) Max (V) | ID Max (A) | PD Max (W) | RDS(on) Max @ VGS = 2.5 V (mΩ) | RDS(on) Max @ VGS = 4.5 V (mΩ) | RDS(on) Max @ VGS = 10 V (mΩ) | Qg Typ @ VGS = 4.5 V (nC) | Qg Typ @ VGS = 10 V (nC) | Qgd Typ @ VGS = 4.5 V (nC) | Qrr Typ (nC) | Ciss Typ (pF) | Coss Typ (pF) | Crss Typ (pF) |
|---|
| NDPL100N10BG | N-Channel | Single | 100 | 20 | 4 | 100 | 110 | | | 8.7 | | 35 | | 400 | 2,950 | 1,250 | 20 |
