NGTB20N60T2TF1: IGBT with Low VF Switching Diode, 600 V, 20 A, VCE(sat) ; 1.45 V, N-Channel

This Insulated Gate Bipolar Transistor (IGBT) features a robust and Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

特性
  • IGBT VCE(sat) = 1.45 V (typ) [IC = 20 A, VGE = 15 V]
  • IGBT tf = 75 ns (typ)
  • Diode VF = 1.5 V (typ) [IF = 20 A]
  • Diode trr = 80 ns (typ)
  • Adaption of full isolation type package
  • Pb-Free, Halogen Free and RoHS compliance
  • Enhancement type
  • Maximum junction temperature Tj = 150°C
优势
  • Improve efficiency by low loss
  • High frequency operation
  • Improve efficiency by low loss
  • High frequency operation
  • Easy operation to mount to heat sink
  • Ecology
应用
  • Power factor correction for white goods appliance
  • General purpose inverter
终端产品
  • White goods
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT with Low VF Switching Diode, 600 V, 20 A, VCE(sat) ; 1.45 V, N-ChannelNGTB20N60T2TF1/D (671kB)P4Aug, 2016
封装图纸 (1)
Document TitleDocument ID/SizeRevision
TO-3PF-3L340AH (31.0kB)A
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NGTB20N60T2TF1GProduct PreviewPb-free Halide freeTO-3PF-3L340AHNATube30联系BDTIC
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTB20N60T2TF1G600201.451.50.330.32803556Yes
IGBT with Low VF Switching Diode, 600 V, 20 A, VCE(sat) ; 1.45 V, N-Channel (671kB) NGTB20N60T2TF1
TO-3PF-3L 2SK3748