NGTD23T120F2: IGBT 1200V 25A FS2 bare die

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.

特性
  • Extremely Efficient Trench with Field Stop Technology
  • TJmax = 175°C
  • Optimized for High Speed Switching
  • 10 µs Short Circuit Capability
  • These are Pb−Free Devices
应用
  • Solar Inverter
  • Uninterruptible Power Inverter Supplies (UPS)
  • Welding
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
IGBT DieNGTD23T120F2WP/D (89kB)0
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NGTD23T120F2SWKActivePb-free Halide free联系BDTICNAPLRNG1$1.46
NGTD23T120F2WPActivePb-free Halide free联系BDTICNAWJAR1$1.45
订购产品技术参数
ProductV(BR)CES Typ (V)IC Max (A)VCE(sat) Typ (V)VF Typ (V)Eoff Typ (mJ)Eon Typ (mJ)Trr Typ (ns)Irr Typ (A)Gate Charge Typ (nC)Short Circuit Withstand (µs)EAS Typ (mJ)PD Max (W)Co-Packaged Diode
NGTD23T120F2SWK1200Limited by Tj(max)1.910
NGTD23T120F2WP1200Limited by Tj(max)1.910
IGBT Die (89kB) NGTD23T120F2