NVATS4A101PZ: Power MOSFET, -30 V, 30 mΩ, -27 A, P-Channel

The NVATS4A101PZ is a power MOSFET designed for compact size and high efficiency which can achieve high thermal performance. AEC-Q101 qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • Low On-Resistance
  • High current capability
  • 100% avalanche tested
  • AEC-Q101 qualified and PPAP capable
  • ATPAK package is pin-compatible with DPAK (TO-252)
  • Pb-Free, Halogen Free and RoHS compliance
优势
  • Minimizes conduction losses, Reduces heat generation
  • Robust load performance
  • Safeguard against voltage overstress failures
  • Suitable for automotive applications
  • Enable replace DPAK with ATPAK without changing landpatterns
  • Environmental consideration
应用
  • Reverse Battery Protection
  • Load Switch
  • Automotive Front Lighting
  • Automotive Body Controllers
终端产品
  • Automotive (Front Lighting, Body Controllers)
应用注释 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Automotive ATPAK Idea for Improving Heat RadiationAND9415/D (531kB)0Apr, 2016
封装图纸 (1)
Document TitleDocument ID/SizeRevision
DPAK (Single Gauge) / ATPAK369AM (58.4kB)O
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFET, -30 V, 30 mOhm, -27 A, P-ChannelNVATS4A101PZ/D (440kB)P1Dec, 2016
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NVATS4A101PZT4GProduct PreviewAEC Qualified PPAP Capable Pb-free Halide freeDPAK (Single Gauge) / ATPAK369AM1Tape and Reel3000联系BDTIC
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVATS4A101PZT4GP-ChannelSingle-3020-2.6-2736513018.54875220155
Power MOSFET, -30 V, 30 mOhm, -27 A, P-Channel (440kB) NVATS4A101PZ
Automotive ATPAK Idea for Improving Heat Radiation NVATS4A104PZ
DPAK (Single Gauge) / ATPAK ATP405