NVLUD4C26N: Power MOSFET 30V 8.7A 21 mOhm Dual N-Channel UDFN

Automotive Power MOSFET in a UDFN 2.0x2.0x0.5m flat lead package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • UDFN Package with Exposed Drain Pads
  • Ultra Low RDS(on)
  • Low Profile UDFN 2.0 x 2.0 x 0.55 mm
  • Pb−Free, Halogen Free/BFR Free
优势
  • Excellent Thermal Conduction
  • Improve System Efficiency
  • Board Space Saving
  • RoHS Compliant
应用
  • DC-DC Converter
  • Power Load Switch
  • Wireless Charging
终端产品
  • Automotive Applications.
仿真模型 (4)
Document TitleDocument ID/SizeRevisionRevision Date
PSpice ModelNTLUD4C26N.LIB (1kB)0
Saber ModelNTLUD4C26N.SIN  (1kB)0
Spice2 ModelNTLUD4C26N.SP2 (1kB)0
Spice3 ModelNTLUD4C26N.SP3 (1kB)0
封装图纸 (1)
Document TitleDocument ID/SizeRevision
UDFN6 2X2, 0.65P517BF (60.9kB)B
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFETNVLUD4C26N/D (124kB)0Dec, 2016
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NVLUD4C26NTAGActiveAEC Qualified PPAP Capable Pb-free Halide freeUDFN-6517BF1Tape and Reel3000$0.3733
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVLUD4C26NTAGN-ChannelDual30121.19.12.6336242151.17.846022527
Power MOSFET (124kB) NVLUD4C26N
PSpice Model NVLUD4C26N
Saber Model NVLUD4C26N
Spice2 Model NVLUD4C26N
Spice3 Model NVLUD4C26N
UDFN6 2X2, 0.65P NTLUD3C20CZ