NVTFS5C670NL: Power MOSFET 60V, 70A, 6.8 mOhm, Single N-Channel, u8FL, Logic Level.

Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

特性
  • Small Footprint (3x3 mm)
  • Low on-resistance
  • Low gate charge
  • u8FL package
  • AEC-Q101 Qualified
  • Pb−Free
优势
  • Compact Design
  • minimizes conduction losses
  • minimizes switching losses
  • very small footprint enabling smaller PCBs and modules
  • suitable for automotive applications
  • RoHS Compliant
应用
  • Reverser Battery protection
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • Switching power supplies
终端产品
  • Solenoid Driver – ABS, Fuel injection
  • Motor Control – EPS, Wipers, Fans, Seats, etc.
  • Load Switch – ECU, Chassis, Body
数据表 (1)
Document TitleDocument ID/SizeRevisionRevision Date
Power MOSFETNVTFS5C670NL/D (85kB)0Nov, 2016
封装图纸 (1)
Document TitleDocument ID/SizeRevision
WDFN8 3.3x3.3, 0.65P511AB (54.7kB)D
产品订购型号
产品状况Compliance封装MSL*容器预算价格 (1千个数量的单价)
NVTFS5C670NLTAGActiveAEC Qualified PPAP Capable Pb-free Halide freeu8FL / WDFN-8511AB1Tape and Reel1500联系BDTIC
NVTFS5C670NLWFTAGActiveAEC Qualified PPAP Capable Pb-free Halide freeu8FL / WDFN-8511AB1Tape and Reel1500联系BDTIC
订购产品技术参数
ProductChannel PolarityConfigurationV(BR)DSS Min (V)VGS Max (V)VGS(th) Max (V)ID Max (A)PD Max (W)RDS(on) Max @ VGS = 2.5 V (mΩ)RDS(on) Max @ VGS = 4.5 V (mΩ)RDS(on) Max @ VGS = 10 V (mΩ)Qg Typ @ VGS = 4.5 V (nC)Qg Typ @ VGS = 10 V (nC)Qgd Typ @ VGS = 4.5 V (nC)Qrr Typ (nC)Ciss Typ (pF)Coss Typ (pF)Crss Typ (pF)
NVTFS5C670NLTAGN-ChannelSingle60202.27063106.8920219140069015
NVTFS5C670NLWFTAGN-ChannelSingle60202.27063106.8920219140069015
Power MOSFET (85kB) NVTFS5C670NL
WDFN8 3.3x3.3, 0.65P NVTFS5C680NL