FC4B21080L 锂离子二次电池保护电路用MOSFET

技术参数
项目性能特性
Catalog PartsFC4B2108
SeriesMOSFET (CSP)
SpiceN/A
TypeNchx2
VSS / VDS (V)12
VGS (V)12
IS (A) /ID (A)2.9
Isp (A) / Idp (A)29
PD (W)0.35
PackageULGA004-W-1212
Package Length (mm)1.11
Package Width (mm)1.11
Package Thickness (mm)0.1
RSS(on)@VGS=4.5V [Min] (mΩ)18
RSS(on)@VGS=4.5V [Typ] (mΩ)27
RSS(on)@VGS=4.5V [Max] (mΩ)37
RSS(on)@VGS=3.8V [Min] (mΩ)21
RSS(on)@VGS=3.8V [Typ] (mΩ)30
RSS(on)@VGS=3.8V [Max] (mΩ)41.5
RSS(on)@VGS=3.1V [Min] (mΩ)23
RSS(on)@VGS=3.1V [Typ] (mΩ)39
RSS(on)@VGS=3.1V [Max] (mΩ)64
RSS(on)@VGS=2.5V [Min] (mΩ)30
RSS(on)@VGS=2.5V [Typ] (mΩ)60
RSS(on)@VGS=2.5V [Max] (mΩ)100
RDS(on)@VGS=10V [Min] (mΩ)-
RDS(on)@VGS=10V [Typ] (mΩ)-
RDS(on)@VGS=10V [Max] (mΩ)-
RDS(on)@VGS=4.5V [Min] (mΩ)-
RDS(on)@VGS=4.5V [Typ] (mΩ)-
RDS(on)@VGS=4.5V [Max] (mΩ)-
RDS(on)@VGS=3.1V [Min] (mΩ)-
RDS(on)@VGS=3.1V [Typ] (mΩ)-
RDS(on)@VGS=3.1V [Max] (mΩ)-
RDS(on)@VGS=2.5V [Min] (mΩ)-
RDS(on)@VGS=2.5V [Typ] (mΩ)-
RDS(on)@VGS=2.5V [Max] (mΩ)-
ISSS / IDSS [Max] (µA)1
IGSS@VGS=16V [Max] (µA)-
IGSS@VGS=12V [Max] (µA)-
IGSS@VGS=8V [Max] (µA)10
IGSS@VGS=5V [Max] (µA)1
Vth [Min] (V)0.4
Vth [Typ] (V)0.85
Vth [Max] (V)1.4
Ciss [Typ] (pF)850
Coss [Typ] (pF)205
Crss [Typ] (pF)203
td(on) [Typ] (µs)0.6
tr [Typ] (µs)1.7
td(off) [Typ] (µs)2.6
tf [Typ] (µs)3.1
Qg [Typ] (nC)7.1
Qgs [Typ] (nC)1.5
Qgd [Typ] (nC)2.7
VF(s-s) / VSD [Typ] (V)0.8
VF(s-s) / VSD [Max] (V)1.2
Tch (°C)150
Tstg (°C)-55 to +150
Rth °C/W)352
RoHS compliant *1Compliant
REACH compliant *2SVHC not included
Halogen FreeYes
文档资料
DataSheet FC4B21080L
Technical information terms of use SK8603300L
Tape and reel information FC4B21080L
Recommended Soldering Conditions FK4B01120L
Letter for the Certificate of Compliance to EU RoHS Directive FC4B21080L
Report of Confirmation of EU REACH SVHC FC4B21080L