FC4B21320L 锂离子二次电池保护电路用MOSFET

技术参数
项目性能特性
Catalog PartsFC4B2132
SeriesMOSFET (CSP)
SpiceAvailable
TypeNchx2
VSS / VDS (V)12
VGS (V)8
IS (A) /ID (A)2.5
Isp (A) / Idp (A)25
PD (W)0.34
PackageXLGA004-W-0808-RA
Package Length (mm)0.8
Package Width (mm)0.8
Package Thickness (mm)0.1
RSS(on)@VGS=4.5V [Min] (mΩ)27
RSS(on)@VGS=4.5V [Typ] (mΩ)36
RSS(on)@VGS=4.5V [Max] (mΩ)48
RSS(on)@VGS=3.8V [Min] (mΩ)29
RSS(on)@VGS=3.8V [Typ] (mΩ)39
RSS(on)@VGS=3.8V [Max] (mΩ)53
RSS(on)@VGS=3.1V [Min] (mΩ)32
RSS(on)@VGS=3.1V [Typ] (mΩ)45
RSS(on)@VGS=3.1V [Max] (mΩ)75
RSS(on)@VGS=2.5V [Min] (mΩ)35
RSS(on)@VGS=2.5V [Typ] (mΩ)58
RSS(on)@VGS=2.5V [Max] (mΩ)115
RDS(on)@VGS=10V [Min] (mΩ)-
RDS(on)@VGS=10V [Typ] (mΩ)-
RDS(on)@VGS=10V [Max] (mΩ)-
RDS(on)@VGS=4.5V [Min] (mΩ)-
RDS(on)@VGS=4.5V [Typ] (mΩ)-
RDS(on)@VGS=4.5V [Max] (mΩ)-
RDS(on)@VGS=3.1V [Min] (mΩ)-
RDS(on)@VGS=3.1V [Typ] (mΩ)-
RDS(on)@VGS=3.1V [Max] (mΩ)-
RDS(on)@VGS=2.5V [Min] (mΩ)-
RDS(on)@VGS=2.5V [Typ] (mΩ)-
RDS(on)@VGS=2.5V [Max] (mΩ)-
ISSS / IDSS [Max] (µA)1
IGSS@VGS=16V [Max] (µA)-
IGSS@VGS=12V [Max] (µA)-
IGSS@VGS=8V [Max] (µA)10
IGSS@VGS=5V [Max] (µA)1
Vth [Min] (V)0.35
Vth [Typ] (V)0.9
Vth [Max] (V)1.4
Ciss [Typ] (pF)205
Coss [Typ] (pF)50
Crss [Typ] (pF)40
td(on) [Typ] (µs)0.1
tr [Typ] (µs)0.15
td(off) [Typ] (µs)0.5
tf [Typ] (µs)0.3
Qg [Typ] (nC)3.5
Qgs [Typ] (nC)0.8
Qgd [Typ] (nC)1
VF(s-s) / VSD [Typ] (V)0.6
VF(s-s) / VSD [Max] (V)1.2
Tch (°C)150
Tstg (°C)-55 to +150
Rth °C/W)368
RoHS compliant *1Compliant
REACH compliant *2SVHC not included
Halogen FreeYes
文档资料
DataSheet FC4B21320L
Technical information terms of use SK8603300L
Tape and reel information FC4B21320L
Recommended Soldering Conditions FK4B01120L
Spice Parameter (Lib) FC4B21320L
Letter for the Certificate of Compliance to EU RoHS Directive FC4B21320L
Report of Confirmation of EU REACH SVHC FC4B21320L