FC6B21150L 锂离子二次电池保护电路用MOSFET

技术参数
项目性能特性
Catalog PartsFC6B2115
SeriesMOSFET (CSP)
SpiceN/A
TypeNchx2
VSS / VDS (V)12
VGS (V)10.5
IS (A) /ID (A)8
Isp (A) / Idp (A)80
PD (W)0.45
PackageMLGA006-W-1721-RA
Package Length (mm)2.14
Package Width (mm)1.67
Package Thickness (mm)0.11
RSS(on)@VGS=4.5V [Min] (mΩ)3
RSS(on)@VGS=4.5V [Typ] (mΩ)4
RSS(on)@VGS=4.5V [Max] (mΩ)5.1
RSS(on)@VGS=3.8V [Min] (mΩ)3.2
RSS(on)@VGS=3.8V [Typ] (mΩ)4.3
RSS(on)@VGS=3.8V [Max] (mΩ)5.5
RSS(on)@VGS=3.1V [Min] (mΩ)3.5
RSS(on)@VGS=3.1V [Typ] (mΩ)4.8
RSS(on)@VGS=3.1V [Max] (mΩ)6.8
RSS(on)@VGS=2.5V [Min] (mΩ)3.8
RSS(on)@VGS=2.5V [Typ] (mΩ)5.9
RSS(on)@VGS=2.5V [Max] (mΩ)10
RDS(on)@VGS=10V [Min] (mΩ)-
RDS(on)@VGS=10V [Typ] (mΩ)-
RDS(on)@VGS=10V [Max] (mΩ)-
RDS(on)@VGS=4.5V [Min] (mΩ)-
RDS(on)@VGS=4.5V [Typ] (mΩ)-
RDS(on)@VGS=4.5V [Max] (mΩ)-
RDS(on)@VGS=3.1V [Min] (mΩ)-
RDS(on)@VGS=3.1V [Typ] (mΩ)-
RDS(on)@VGS=3.1V [Max] (mΩ)-
RDS(on)@VGS=2.5V [Min] (mΩ)-
RDS(on)@VGS=2.5V [Typ] (mΩ)-
RDS(on)@VGS=2.5V [Max] (mΩ)-
ISSS / IDSS [Max] (µA)1
IGSS@VGS=16V [Max] (µA)-
IGSS@VGS=12V [Max] (µA)-
IGSS@VGS=8V [Max] (µA)10
IGSS@VGS=5V [Max] (µA)1
Vth [Min] (V)0.35
Vth [Typ] (V)0.9
Vth [Max] (V)1.4
Ciss [Typ] (pF)2760
Coss [Typ] (pF)450
Crss [Typ] (pF)390
td(on) [Typ] (µs)4.1
tr [Typ] (µs)5.2
td(off) [Typ] (µs)12.9
tf [Typ] (µs)8.3
Qg [Typ] (nC)26
Qgs [Typ] (nC)9
Qgd [Typ] (nC)8
VF(s-s) / VSD [Typ] (V)0.8
VF(s-s) / VSD [Max] (V)1.2
Tch (°C)150
Tstg (°C)-55 to +150
Rth °C/W)278
RoHS compliant *1Compliant
REACH compliant *2SVHC not included
Halogen FreeYes
文档资料
DataSheet FC6B21150L
Technical information terms of use SK8603300L
Tape and reel information FC6B21150L
Recommended Soldering Conditions FK4B01120L
Letter for the Certificate of Compliance to EU RoHS Directive FC6B21150L
Report of Confirmation of EU REACH SVHC FC6B21150L