FC6B22500L 锂离子二次电池保护电路用MOSFET

技术参数
项目性能特性
Catalog PartsFC6B22500L
SeriesMOSFET (CSP)
SpiceN/A
TypeNchx2
VSS / VDS (V)20
VGS (V)12
IS (A) /ID (A)6.2
Isp (A) / Idp (A)62
PD (W)0.44
PackageMLGA006-W-1320-RA
Package Length (mm)2.02
Package Width (mm)1.33
Package Thickness (mm)0.11
RSS(on)@VGS=4.5V [Min] (mΩ)5.2
RSS(on)@VGS=4.5V [Typ] (mΩ)7.9
RSS(on)@VGS=4.5V [Max] (mΩ)10.3
RSS(on)@VGS=3.8V [Min] (mΩ)5.5
RSS(on)@VGS=3.8V [Typ] (mΩ)8.3
RSS(on)@VGS=3.8V [Max] (mΩ)10.8
RSS(on)@VGS=3.1V [Min] (mΩ)5.8
RSS(on)@VGS=3.1V [Typ] (mΩ)9.2
RSS(on)@VGS=3.1V [Max] (mΩ)14.7
RSS(on)@VGS=2.5V [Min] (mΩ)6.3
RSS(on)@VGS=2.5V [Typ] (mΩ)11.1
RSS(on)@VGS=2.5V [Max] (mΩ)21.8
RDS(on)@VGS=10V [Min] (mΩ)-
RDS(on)@VGS=10V [Typ] (mΩ)-
RDS(on)@VGS=10V [Max] (mΩ)-
RDS(on)@VGS=4.5V [Min] (mΩ)-
RDS(on)@VGS=4.5V [Typ] (mΩ)-
RDS(on)@VGS=4.5V [Max] (mΩ)-
RDS(on)@VGS=3.1V [Min] (mΩ)-
RDS(on)@VGS=3.1V [Typ] (mΩ)-
RDS(on)@VGS=3.1V [Max] (mΩ)-
RDS(on)@VGS=2.5V [Min] (mΩ)-
RDS(on)@VGS=2.5V [Typ] (mΩ)-
RDS(on)@VGS=2.5V [Max] (mΩ)-
ISSS / IDSS [Max] (µA)1
IGSS@VGS=16V [Max] (µA)-
IGSS@VGS=12V [Max] (µA)-
IGSS@VGS=8V [Max] (µA)10
IGSS@VGS=5V [Max] (µA)1
Vth [Min] (V)0.35
Vth [Typ] (V)0.9
Vth [Max] (V)1.4
Ciss [Typ] (pF)1600
Coss [Typ] (pF)165
Crss [Typ] (pF)130
td(on) [Typ] (µs)0.4
tr [Typ] (µs)0.9
td(off) [Typ] (µs)2.1
tf [Typ] (µs)1.4
Qg [Typ] (nC)13
Qgs [Typ] (nC)5.2
Qgd [Typ] (nC)4
VF(s-s) / VSD [Typ] (V)0.7
VF(s-s) / VSD [Max] (V)1.2
Tch (°C)150
Tstg (°C)-55 to +150
Rth °C/W)284
Halogen FreeYes
文档资料
DataSheet FC6B22500L
Technical information terms of use SK8603300L
Recommended Soldering Conditions FK4B01120L