FCAB21350L 锂离子二次电池保护电路用MOSFET

技术参数
项目性能特性
Catalog PartsFCAB2135
SeriesMOSFET (CSP)
SpiceAvailable
TypeNchx2
VSS / VDS (V)12
VGS (V)8
IS (A) /ID (A)12
Isp (A) / Idp (A)120
PD (W)0.45
PackageTCSP1831011-N1
Package Length (mm)3.05
Package Width (mm)1.77
Package Thickness (mm)0.11
RSS(on)@VGS=4.5V [Min] (mΩ)1.55
RSS(on)@VGS=4.5V [Typ] (mΩ)2.1
RSS(on)@VGS=4.5V [Max] (mΩ)2.75
RSS(on)@VGS=3.8V [Min] (mΩ)1.6
RSS(on)@VGS=3.8V [Typ] (mΩ)2.2
RSS(on)@VGS=3.8V [Max] (mΩ)2.85
RSS(on)@VGS=3.1V [Min] (mΩ)1.65
RSS(on)@VGS=3.1V [Typ] (mΩ)2.4
RSS(on)@VGS=3.1V [Max] (mΩ)3.95
RSS(on)@VGS=2.5V [Min] (mΩ)1.9
RSS(on)@VGS=2.5V [Typ] (mΩ)3.1
RSS(on)@VGS=2.5V [Max] (mΩ)6.1
RDS(on)@VGS=10V [Min] (mΩ)-
RDS(on)@VGS=10V [Typ] (mΩ)-
RDS(on)@VGS=10V [Max] (mΩ)-
RDS(on)@VGS=4.5V [Min] (mΩ)-
RDS(on)@VGS=4.5V [Typ] (mΩ)-
RDS(on)@VGS=4.5V [Max] (mΩ)-
RDS(on)@VGS=3.1V [Min] (mΩ)-
RDS(on)@VGS=3.1V [Typ] (mΩ)-
RDS(on)@VGS=3.1V [Max] (mΩ)-
RDS(on)@VGS=2.5V [Min] (mΩ)-
RDS(on)@VGS=2.5V [Typ] (mΩ)-
RDS(on)@VGS=2.5V [Max] (mΩ)-
ISSS / IDSS [Max] (µA)1
IGSS@VGS=16V [Max] (µA)-
IGSS@VGS=12V [Max] (µA)-
IGSS@VGS=8V [Max] (µA)10
IGSS@VGS=5V [Max] (µA)1
Vth [Min] (V)0.35
Vth [Typ] (V)0.9
Vth [Max] (V)1.4
Ciss [Typ] (pF)4650
Coss [Typ] (pF)580
Crss [Typ] (pF)530
td(on) [Typ] (µs)1.2
tr [Typ] (µs)2.3
td(off) [Typ] (µs)9
tf [Typ] (µs)5
Qg [Typ] (nC)43
Qgs [Typ] (nC)10
Qgd [Typ] (nC)10
VF(s-s) / VSD [Typ] (V)-
VF(s-s) / VSD [Max] (V)-
Tch (°C)150
Tstg (°C)-55 to +150
Rth °C/W)278
RoHS compliant *1Compliant
REACH compliant *2SVHC not included
Halogen FreeYes
文档资料
DataSheet FCAB21350L
Technical information terms of use SK8603300L
Recommended Soldering Conditions FK4B01120L
Spice Parameter (Lib) FCAB21350L
Letter for the Certificate of Compliance to EU RoHS Directive FCAB21350L
Report of Confirmation of EU REACH SVHC FCAB21350L