FCAB21490L 锂离子二次电池保护电路用MOSFET

技术参数
项目性能特性
Catalog PartsFCAB2149
SeriesMOSFET (CSP)
SpiceN/A
TypeNchx2
VSS / VDS (V)12
VGS (V)8
IS (A) /ID (A)13.5
Isp (A) / Idp (A)135
PD (W)0.54
PackageTCSP1530011-N1
Package Length (mm)2.98
Package Width (mm)1.49
Package Thickness (mm)0.11
RSS(on)@VGS=4.5V [Min] (mΩ)1.55
RSS(on)@VGS=4.5V [Typ] (mΩ)2.1
RSS(on)@VGS=4.5V [Max] (mΩ)2.75
RSS(on)@VGS=3.8V [Min] (mΩ)1.6
RSS(on)@VGS=3.8V [Typ] (mΩ)2.2
RSS(on)@VGS=3.8V [Max] (mΩ)2.75
RSS(on)@VGS=3.1V [Min] (mΩ)1.65
RSS(on)@VGS=3.1V [Typ] (mΩ)2.4
RSS(on)@VGS=3.1V [Max] (mΩ)3.95
RSS(on)@VGS=2.5V [Min] (mΩ)1.9
RSS(on)@VGS=2.5V [Typ] (mΩ)3.1
RSS(on)@VGS=2.5V [Max] (mΩ)6.1
RDS(on)@VGS=10V [Min] (mΩ)-
RDS(on)@VGS=10V [Typ] (mΩ)-
RDS(on)@VGS=10V [Max] (mΩ)-
RDS(on)@VGS=4.5V [Min] (mΩ)-
RDS(on)@VGS=4.5V [Typ] (mΩ)-
RDS(on)@VGS=4.5V [Max] (mΩ)-
RDS(on)@VGS=3.1V [Min] (mΩ)-
RDS(on)@VGS=3.1V [Typ] (mΩ)-
RDS(on)@VGS=3.1V [Max] (mΩ)-
RDS(on)@VGS=2.5V [Min] (mΩ)-
RDS(on)@VGS=2.5V [Typ] (mΩ)-
RDS(on)@VGS=2.5V [Max] (mΩ)-
ISSS / IDSS [Max] (µA)1
IGSS@VGS=16V [Max] (µA)-
IGSS@VGS=12V [Max] (µA)-
IGSS@VGS=8V [Max] (µA)10
IGSS@VGS=5V [Max] (µA)1
Vth [Min] (V)0.35
Vth [Typ] (V)0.9
Vth [Max] (V)1.4
Ciss [Typ] (pF)3570
Coss [Typ] (pF)460
Crss [Typ] (pF)410
td(on) [Typ] (µs)0.7
tr [Typ] (µs)1.5
td(off) [Typ] (µs)6.7
tf [Typ] (µs)4.1
Qg [Typ] (nC)25
Qgs [Typ] (nC)12
Qgd [Typ] (nC)6
VF(s-s) / VSD [Typ] (V)-
VF(s-s) / VSD [Max] (V)-
Tch (°C)150
Tstg (°C)-55 to +150
Rth °C/W)-
Halogen FreeYes
文档资料
DataSheet FCAB21490L
Technical information terms of use SK8603300L
Recommended Soldering Conditions FK4B01120L