FCAB22510L 锂离子二次电池保护电路用MOSFET

技术参数
项目性能特性
Catalog PartsFCAB22510L
SeriesMOSFET (CSP)
SpiceN/A
TypeNchx2
VSS / VDS (V)20
VGS (V)12
IS (A) /ID (A)8.5
Isp (A) / Idp (A)85
PD (W)0.51
PackageTCSP1623011-N1
Package Length (mm)2.34
Package Width (mm)1.56
Package Thickness (mm)0.11
RSS(on)@VGS=4.5V [Min] (mΩ)3.3
RSS(on)@VGS=4.5V [Typ] (mΩ)5
RSS(on)@VGS=4.5V [Max] (mΩ)6.5
RSS(on)@VGS=3.8V [Min] (mΩ)3.5
RSS(on)@VGS=3.8V [Typ] (mΩ)5.3
RSS(on)@VGS=3.8V [Max] (mΩ)6.9
RSS(on)@VGS=3.1V [Min] (mΩ)3.6
RSS(on)@VGS=3.1V [Typ] (mΩ)5.9
RSS(on)@VGS=3.1V [Max] (mΩ)9.3
RSS(on)@VGS=2.5V [Min] (mΩ)4
RSS(on)@VGS=2.5V [Typ] (mΩ)7.1
RSS(on)@VGS=2.5V [Max] (mΩ)14
RDS(on)@VGS=10V [Min] (mΩ)-
RDS(on)@VGS=10V [Typ] (mΩ)-
RDS(on)@VGS=10V [Max] (mΩ)-
RDS(on)@VGS=4.5V [Min] (mΩ)-
RDS(on)@VGS=4.5V [Typ] (mΩ)-
RDS(on)@VGS=4.5V [Max] (mΩ)-
RDS(on)@VGS=3.1V [Min] (mΩ)-
RDS(on)@VGS=3.1V [Typ] (mΩ)-
RDS(on)@VGS=3.1V [Max] (mΩ)-
RDS(on)@VGS=2.5V [Min] (mΩ)-
RDS(on)@VGS=2.5V [Typ] (mΩ)-
RDS(on)@VGS=2.5V [Max] (mΩ)-
ISSS / IDSS [Max] (µA)1
IGSS@VGS=16V [Max] (µA)-
IGSS@VGS=12V [Max] (µA)-
IGSS@VGS=8V [Max] (µA)10
IGSS@VGS=5V [Max] (µA)1
Vth [Min] (V)0.35
Vth [Typ] (V)0.9
Vth [Max] (V)1.4
Ciss [Typ] (pF)2280
Coss [Typ] (pF)240
Crss [Typ] (pF)210
td(on) [Typ] (µs)0.5
tr [Typ] (µs)1.2
td(off) [Typ] (µs)3.6
tf [Typ] (µs)2.2
Qg [Typ] (nC)19
Qgs [Typ] (nC)8
Qgd [Typ] (nC)4.5
VF(s-s) / VSD [Typ] (V)0.7
VF(s-s) / VSD [Max] (V)1.2
Tch (°C)150
Tstg (°C)-55 to +150
Rth °C/W)245
Halogen FreeYes
文档资料
DataSheet FCAB22510L
Technical information terms of use SK8603300L
Recommended Soldering Conditions FK4B01120L