MTM78E2B0LBF 锂离子二次电池保护电路用MOSFET

技术参数
项目性能特性
Catalog PartsMTM78E2B0LBF
SeriesMOSFET
SpiceAvailable
TypeNchx2
VSS / VDS (V)20
VGS (V)12
IS (A) /ID (A)4
Isp (A) / Idp (A)40
PD (W)0.7
PackageWSMini8-F1-B
Package Length (mm)2.1
Package Width (mm)2
Package Thickness (mm)0.7
RSS(on)@VGS=4.5V [Min] (mΩ)-
RSS(on)@VGS=4.5V [Typ] (mΩ)-
RSS(on)@VGS=4.5V [Max] (mΩ)-
RSS(on)@VGS=3.8V [Min] (mΩ)-
RSS(on)@VGS=3.8V [Typ] (mΩ)-
RSS(on)@VGS=3.8V [Max] (mΩ)-
RSS(on)@VGS=3.1V [Min] (mΩ)-
RSS(on)@VGS=3.1V [Typ] (mΩ)-
RSS(on)@VGS=3.1V [Max] (mΩ)-
RSS(on)@VGS=2.5V [Min] (mΩ)-
RSS(on)@VGS=2.5V [Typ] (mΩ)-
RSS(on)@VGS=2.5V [Max] (mΩ)-
RDS(on)@VGS=10V [Min] (mΩ)-
RDS(on)@VGS=10V [Typ] (mΩ)-
RDS(on)@VGS=10V [Max] (mΩ)-
RDS(on)@VGS=4.5V [Min] (mΩ)-
RDS(on)@VGS=4.5V [Typ] (mΩ)-
RDS(on)@VGS=4.5V [Max] (mΩ)-
RDS(on)@VGS=3.1V [Min] (mΩ)-
RDS(on)@VGS=3.1V [Typ] (mΩ)-
RDS(on)@VGS=3.1V [Max] (mΩ)-
RDS(on)@VGS=2.5V [Min] (mΩ)-
RDS(on)@VGS=2.5V [Typ] (mΩ)30
RDS(on)@VGS=2.5V [Max] (mΩ)36
ISSS / IDSS [Max] (µA)1
IGSS@VGS=16V [Max] (µA)-
IGSS@VGS=12V [Max] (µA)10
IGSS@VGS=8V [Max] (µA)-
IGSS@VGS=5V [Max] (µA)-
Vth [Min] (V)0.4
Vth [Typ] (V)0.85
Vth [Max] (V)1.3
Ciss [Typ] (pF)1100
Coss [Typ] (pF)75
Crss [Typ] (pF)70
td(on) [Typ] (µs)0.2
tr [Typ] (µs)0.5
td(off) [Typ] (µs)2
tf [Typ] (µs)1.5
Qg [Typ] (nC)-
Qgs [Typ] (nC)-
Qgd [Typ] (nC)-
VF(s-s) / VSD [Typ] (V)-
VF(s-s) / VSD [Max] (V)-
Tch (°C)150
Tstg (°C)-55 to +150
Rth °C/W)-
RoHS compliant *1Compliant
REACH compliant *2SVHC not included
Halogen FreeYes
文档资料
DataSheet MTM78E2B0LBF
Technical information terms of use SK8603300L
Tape and reel information MTM78E2B0LBF
Recommended Soldering Conditions SK8603300L
Spice Parameter (PDF) MTM78E2B0LBF
Spice Parameter (Lib) MTM78E2B0LBF
Letter for the Certificate of Compliance to EU RoHS Directive MTM78E2B0LBF
Report of Confirmation of EU REACH SVHC MTM78E2B0LBF