技术特性| Grade | Automotive | | Channel Number [ch] | 1 | | Drain-Source Voltage (Max.)[V] | 42.0 | | Output Current[A] | 13.0 | | ON Resistance [mΩ] | 85 | | Over Current Detect [A] | 13 | | Active Clamp Energy [mJ] | 260.0 | | Supply Voltage(Min.)[V] | 3 | | Supply Voltage(Max.)[V] | 5.5 | | Thermal Shut Down | Self-restart | | Junction Temperature Tj (Min.)[°C] | -40 | | Junction Temperature Tj (Max.)[°C] | 150 |
| 技术资料下载产品特点- Built-in overcurrent limiting circuit (OCP)
- Built-in thermal shutdown circuit (TSD)
- Built-in active clamp circuit
- Direct control enabled from CMOS logic IC, etc.
- Low On resistance RON=85mΩ (Typ)
(when VIN=5V, ID=0.5A, Tj25°C) - Monolithic power management IC with the control block (CMOS) and power MOS FET mounted on a single chip
- AEC-Q100 Qualified
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