30V Nch+Nch 功率MOSFET HS8K11

HS8K11是适用于开关用途的功率MOSFET。

型号Status封装包装数量最小独立包装数量包装形态RoHS
HS8K11TB供应中HSML3030L1030003000TapingYes

HS8K11 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeHSML3030L10
Package Size[mm]3.0x3.0(t=0.6)
Number of terminal10
PolarityNch+Nch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]7.0
RDS(on)[Ω] VGS=4.5V (Typ.)0.0208
RDS(on)[Ω] VGS=10V (Typ.)0.0128
RDS(on)[Ω] VGS=Drive (Typ.)0.0208
Total gate charge Qg[nC]5.7
Power Dissipation (PD)[W]2.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
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引脚配置图
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HS8K11 HS8K11
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Reference Circuit HS8K11
Reference Circuit HS8K11
Reference Circuit HS8K11
SPICE Simulation Evaluation Circuit Data HS8K11
SPICE Simulation Evaluation Circuit Data HS8K11
SPICE Simulation Evaluation Circuit Data HS8K11
Spice Model HS8K11
Taping Specifications VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
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