30V Nch+Nch 功率MOSFET QH8KA1

QH8KA1是低导通电阻的功率MOSFET。采用小型表面安装封装，有助于节省空间。

型号Status封装包装数量最小独立包装数量包装形态RoHS
QH8KA1TCR供应中TSMT830003000TapingYes

QH8KA1 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTSMT8
Package Size[mm]3.0x2.8(t=0.8)
Number of terminal8
PolarityNch+Nch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]4.5
RDS(on)[Ω] VGS=4.5V (Typ.)0.086
RDS(on)[Ω] VGS=10V (Typ.)0.056
RDS(on)[Ω] VGS=Drive (Typ.)0.086
Total gate charge Qg[nC]1.5
Power Dissipation (PD)[W]2.4
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
技术资料下载
引脚配置图
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Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
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