30V Nch+Pch 中功率MOSFET QH8MA3

QH8MA3是低导通电阻的中功率MOSFET。采用小型表面安装封装,有助于节省空间。

型号Status封装包装数量最小独立包装数量包装形态RoHS
QH8MA3TCR供应中TSMT830003000TapingYes

QH8MA3 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTSMT8
Package Size[mm]3.0x2.8(t=0.8)
Number of terminal8
PolarityNch+Pch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]7.0
RDS(on)[Ω] VGS=4.5V (Typ.)0.035
RDS(on)[Ω] VGS=10V (Typ.)0.022
RDS(on)[Ω] VGS=Drive (Typ.)0.035
Total gate charge Qg[nC]3.7
Power Dissipation (PD)[W]2.5
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
技术资料下载
引脚配置图
相关产品
PART NUMBERProduct SeriesDatasheet
RQ6E050AJ通用MOSFETDatasheet
HP8MA2通用MOSFETDatasheet
RRS050P03FRA车载MOSFETDatasheet
DTA113ZCAHZG车载数字晶体管Datasheet
DTA114TCAHZG车载数字晶体管Datasheet
DTA114YCAHZG车载数字晶体管Datasheet
QH8MA3 QH8MA3
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series QH8MA2