4V Drive Nch+Nch MOSFET QS8K11

电界效果晶体管MOSFET。复合两颗Nch MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。

型号Status封装包装数量最小独立包装数量包装形态RoHS
QS8K11TCR供应中TSMT830003000TapingYes

QS8K11 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTSMT8
Package Size[mm]3.0x2.8(t=0.8)
Number of terminal8
PolarityNch+Nch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]3.5
RDS(on)[Ω] VGS=4V (Typ.)0.05
RDS(on)[Ω] VGS=4.5V (Typ.)0.045
RDS(on)[Ω] VGS=10V (Typ.)0.035
RDS(on)[Ω] VGS=Drive (Typ.)0.05
Total gate charge Qg[nC]3.3
Power Dissipation (PD)[W]1.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
应用领域
  • POS (Point of Sales System)
  • Coin Processing Machines
  • Portable Data Terminal
  • 智能电表
  • Digital Multimeter: Handy Type
  • 有刷电机
  • AC伺服系统
  • Network Attached Storage
  • PLC(Programmable Logic Controller)
  • 漏电断路器
  • DVR/DVS
  • Electric Bike
  • 太阳能发电逆变器
  • X-ray Inspection Machine for Security
  • 监控摄像机
  • Intercom / Baby Monitor
  • Fingerprint Authentication Device
  • Machine Vision Camera for Industrial
  • 无刷电机
  • 步进电机
  • Display for EMS
  • 内置电脑
  • Digital Multimeter: Bench Type
  • 监控摄像机(IP网络)
技术资料下载
引脚配置图
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QS8K11 QS8K11
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Spice Model (lib) QS8K11
Thermal Model (lib) QS8K11
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Reliability Information RQ1E070RP
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series TT8K1