电界效果晶体管MOSFET。复合各一颗Pch和Nch MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。

型号Status封装包装数量最小独立包装数量包装形态RoHS数据手册
QS8M51TRActiveTSMT83000100TapingYesQS8M51
技术特性
GradeStandard
Package CodeTSMT8
Package Size[mm]3.0x2.8(t=0.8)
Number of terminal8
PolarityNch+Pch
Drain-Source Voltage VDSS[V]100
Drain Current ID[A]2.0
RDS(on)[Ω] VGS=4V (Typ.)0.26
RDS(on)[Ω] VGS=10V (Typ.)0.24
RDS(on)[Ω] VGS=Drive (Typ.)0.26
Total gate charge Qg[nC]4.7
Power Dissipation (PD)[W]1.5
Drive Voltage[V]4.0
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
应用领域
  • POS (Point of Sales System)
  • Coin Processing Machines
  • Portable Data Terminal
  • 智能电表
  • Digital Multimeter: Handy Type
  • 有刷电机
  • AC伺服系统
  • Network Attached Storage
  • DVR/DVS
  • 漏电断路器
  • PLC(Programmable Logic Controller)
  • Electric Bike
  • 太阳能发电逆变器
  • X-ray Inspection Machine for Security
  • 监控摄像机
  • Intercom / Baby Monitor
  • Fingerprint Authentication Device
  • Machine Vision Camera for Industrial
  • 无刷电机
  • 步进电机
  • Display for EMS
  • Digital Multimeter: Bench Type
  • 内置电脑
  • 监控摄像机(IP网络)
技术支持资料下载
产品特点
  • 4V驱动型 Nch+Pch 中功率MOSFET
引脚配置图
4V Drive Nch+Pch MOSFET - QS8M51 QS8M51
Spice Model (lib) QS8M51
Package Information VT6M1
Part Explanation VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Reliability Information RQ1E070RP
Operation Notes VT6M1
Operation Notes VT6M1
NE Handbook Series ZDX100N60