10V驱动型 Nch MOSFET R6047ENZ1

场效应晶体管MOSFET。通过采用微细工艺的“超低导通电阻元件”,为用户提供应用广泛的功率MOSFET。根据用途备有小型、大功率、复合化的丰富产品阵容,可满足多样的市场需求。

型号Status封装包装数量最小独立包装数量包装形态RoHS
R6047ENZ1C9供应中TO-247450450BulkYes

R6047ENZ1 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTO-247
Package Size[mm]21.1x15.9(t5.0)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]600
Drain Current ID[A]47.0
RDS(on)[Ω] VGS=10V (Typ.)0.066
RDS(on)[Ω] VGS=Drive (Typ.)0.066
Total gate charge Qg[nC]145.0
Power Dissipation (PD)[W]120.0
Drive Voltage[V]10.0
Mounting StyleLeaded type
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
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引脚配置图
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SPICE Simulation Evaluation Circuit Data R6047ENZ1
Spice Model (lib) R6047ENZ1
Thermal Model (lib) R6047ENZ1
Taping Specifications VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDX100N60