4V驱动型 Nch 功率MOSFET RCD100N19

Nch 190V 10A 功率MOSFET

型号Status封装包装数量最小独立包装数量包装形态RoHS
RCD100N19TL供应中CPT325002500TapingYes

RCD100N19 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTO-252(DPAK)
JEITA PackageSC-63
Package Size[mm]6.5x9.5(t=2.3)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]190
Drain Current ID[A]10.0
RDS(on)[Ω] VGS=4V (Typ.)0.136
RDS(on)[Ω] VGS=10V (Typ.)0.13
RDS(on)[Ω] VGS=Drive (Typ.)0.136
Total gate charge Qg[nC]52.0
Power Dissipation (PD)[W]20.0
Drive Voltage[V]4.0
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
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引脚配置图
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RCD100N19 RCD100N19
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) RCD100N19
Thermal Model (lib) RCD100N19
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDX100N60