4V驱动型 Nch 功率MOSFET RCD100N19

Nch 190V 10A 功率MOSFET

型号Status封装包装数量最小独立包装数量包装形态RoHS
RCD100N19TL供应中CPT325002500TapingYes

RCD100N19 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTO-252(DPAK)
JEITA PackageSC-63
Package Size[mm]6.5x9.5(t=2.3)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]190
Drain Current ID[A]10.0
RDS(on)[Ω] VGS=4V (Typ.)0.136
RDS(on)[Ω] VGS=10V (Typ.)0.13
RDS(on)[Ω] VGS=Drive (Typ.)0.136
Total gate charge Qg[nC]52.0
Power Dissipation (PD)[W]20.0
Drive Voltage[V]4.0
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
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引脚配置图
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Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDX100N60
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