10V Drive Nch MOSFET RCJ510N25

电界効果晶体管的MOSFET。提供通过采用细微流程的「超低阻值的设备」而在广泛领域得以应用的功率MOSFET,并且结合用途,以多样的小型高功率复合型的产品线对应多种市场需求。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RCJ510N25TL供应中LPTS(D2PAK)10001000TapingYes

RCJ510N25 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTO-263(D2PAK)
JEITA PackageSC-83
Package Size[mm]10.1x13.1(t=4.5)
Number of terminal3
PolarityNch
Drain-Source Voltage VDSS[V]250
Drain Current ID[A]51.0
RDS(on)[Ω] VGS=10V (Typ.)0.048
RDS(on)[Ω] VGS=Drive (Typ.)0.048
Total gate charge Qg[nC]120.0
Power Dissipation (PD)[W]40.0
Drive Voltage[V]10.0
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
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引脚配置图
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RCJ510N25 RCJ510N25
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DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) RCJ510N25
Thermal Model (lib) RCJ510N25
Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDX100N60