650V 30A Field Stop Trench IGBT RGTH60TK65D

罗姆的IGBT(绝缘栅极型双极晶体管)产品为广大的高电压、大电流应用的高效化和节能化做出了贡献。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RGTH60TK65DGC11供应中TO-3PFM450450TubeYes

RGTH60TK65D 数据手册 Data Sheet

技术特性
VCES [V]650
IC(100°C)[A]17
VCE(sat) (Typ.) [V]1.6
Built-in DiodeFRD
Pd [W]61
VGE(th) (Min.)[V]4.5
BVCES (Min.)[V]650
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]175
技术资料下载
产品特点
  • Low Collector-Emitter Saturation Voltage
  • High Speed Switching
  • Low Switching Loss & Soft Switching
  • Built in Very Fast & Soft Recovery FRD (RFN-Series)
  • Pb-free Lead Plating; RoHS Compliant
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