Nch 30V 18A 中功率MOSFET RQ3E180AJ

RQ3E180AJ是低导通电阻、小型表面安装封装的MOSFET。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RQ3E180AJTB供应中HSMT830003000TapingYes

RQ3E180AJ 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeHSMT8(3.3x3.3)
Package Size[mm]3.3x3.3(t=0.8)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]18.0
RDS(on)[Ω] VGS=2.5V (Typ.)0.0045
RDS(on)[Ω] VGS=4.5V (Typ.)0.0035
RDS(on)[Ω] VGS=Drive (Typ.)0.0045
Total gate charge Qg[nC]39.0
Power Dissipation (PD)[W]2.0
Drive Voltage[V]2.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
技术资料下载
产品特点
  • Low on - resistance.
  • Small Surface Mount Package.
  • Pb-free lead plating; RoHS compliant.
引脚配置图
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Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series RQ5E035BN
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