Nch 30V 11A Middle Power MOSFET RQ7E110AJ

RQ7E110AJ is low on-resistance and small surface mount package MOSFET for switching application.

型号Status封装包装数量最小独立包装数量包装形态RoHS
RQ7E110AJTCR供应中TSMT830003000TapingYes

RQ7E110AJ 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeTSMT8
Package Size[mm]3.0x2.8(t=0.8)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]11.0
RDS(on)[Ω] VGS=2.5V (Typ.)0.0091
RDS(on)[Ω] VGS=4.5V (Typ.)0.0068
RDS(on)[Ω] VGS=Drive (Typ.)0.0091
Total gate charge Qg[nC]22.0
Power Dissipation (PD)[W]1.5
Drive Voltage[V]2.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
技术资料下载
产品特点
  • Low on - resistance.
  • Small Surface Mount Package (TSMT8).
  • Pb-free lead plating; RoHS compliant
引脚配置图
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Package Information VT6M1
Taping Specifications VT6M1
Condition Of Soldering VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1