Nch 30V 20A 中功率MOSFET RS1E200BN

RS1E200BN是适用于小型大功率封装的开关用途的中功率MOSFET。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RS1E200BNTB供应中HSOP8(Single)25002500TapingYes

RS1E200BN 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeHSOP8S(5x6)
Package Size[mm]5.0x6.0(t=1.0)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]80.0
RDS(on)[Ω] VGS=4.5V (Typ.)0.0038
RDS(on)[Ω] VGS=10V (Typ.)0.0028
RDS(on)[Ω] VGS=Drive (Typ.)0.0038
Total gate charge Qg[nC]29.0
Power Dissipation (PD)[W]25.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
应用领域
  • 监控摄像机（IP网络）
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引脚配置图
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Spice Model (lib) RS1E200BN
Thermal Model (lib) RS1E200BN
Taping Specifications VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDS020N60
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