Nch 30V 35A 中功率MOSFET RS1E350BN

RS1E350BN是低导通电阻、小型大功率封装的MOSFET。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RS1E350BNTB供应中HSOP8(Single)25002500TapingYes

RS1E350BN 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeHSOP8S(5x6)
Package Size[mm]5.0x6.0(t=1.0)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]35.0
RDS(on)[Ω] VGS=4.5V (Typ.)0.0018
RDS(on)[Ω] VGS=10V (Typ.)0.0012
RDS(on)[Ω] VGS=Drive (Typ.)0.0018
Total gate charge Qg[nC]95.0
Power Dissipation (PD)[W]3.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
应用领域
  • 监控摄像机(IP网络)
技术资料下载
引脚配置图
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RS1E350BN RS1E350BN
DTA113ZCAHZG DTA113ZCAHZG
DTA114TCAHZG DTA114TCAHZG
DTA114YCAHZG DTA114YCAHZG
Spice Model (lib) RS1E350BN
Thermal Model (lib) RS1E350BN
Taping Specifications VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDS020N60