Nch 30V 35A 中功率MOSFET RS1E350BN

RS1E350BN是低导通电阻、小型大功率封装的MOSFET。

型号Status封装包装数量最小独立包装数量包装形态RoHS
RS1E350BNTB供应中HSOP8(Single)25002500TapingYes

RS1E350BN 数据手册 Data Sheet

技术特性
GradeStandard
Package CodeHSOP8S(5x6)
Package Size[mm]5.0x6.0(t=1.0)
Number of terminal8
PolarityNch
Drain-Source Voltage VDSS[V]30
Drain Current ID[A]35.0
RDS(on)[Ω] VGS=4.5V (Typ.)0.0018
RDS(on)[Ω] VGS=10V (Typ.)0.0012
RDS(on)[Ω] VGS=Drive (Typ.)0.0018
Total gate charge Qg[nC]95.0
Power Dissipation (PD)[W]3.0
Drive Voltage[V]4.5
Mounting StyleSurface mount
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]150
应用领域
  • 监控摄像机（IP网络）
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引脚配置图
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RS1E350BN RS1E350BN
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Spice Model (lib) RS1E350BN
Thermal Model (lib) RS1E350BN
Taping Specifications VT6M1
Storage Conditions VT6M1
Operation Notes VT6M1
Operation Notes VT6M1
Part Explanation VT6M1
NE Handbook Series ZDS020N60
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