N-channel Silicon Carbide Power MOSFET SCT3022KL

SCT3022KL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

型号Status封装包装数量最小独立包装数量包装形态RoHS
SCT3022KLC11供应中TO-247N45030TubeYes

SCT3022KL 数据手册 Data Sheet

技术特性
Drain-source Voltage[V]1200
Drain-source On-state Resistance(Typ.)[mΩ]22
Drain Current[A]95.0
Total Power Dissipation[W]427
Junction Temperature(Max.)[°C]175
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]175
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