N-channel Silicon Carbide Power MOSFET SCT3120AL

SCT3120AL is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.

型号Status封装包装数量最小独立包装数量包装形态RoHS
SCT3120ALC11供应中TO-247N45030TubeYes

SCT3120AL 数据手册 Data Sheet

技术特性
Drain-source Voltage[V]650
Drain-source On-state Resistance(Typ.)[mΩ]120
Drain Current[A]21.0
Total Power Dissipation[W]103
Junction Temperature(Max.)[°C]175
Storage Temperature (Min.)[°C]-55
Storage Temperature (Max.)[°C]175
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