2STA1695:High power PNP epitaxial planar bipolar transistor

This device is an PNP transistor manufactured using BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor exhibits good gain linearity behavior. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stages.

Key Features

  • High breakdown voltage VCEO = -140 V
  • Complementary to 2STC4468
  • Typical ft = 20 MHz
  • Fully characterized at 125 °C
产品规格
DescriptionVersionSize
DS5325: High power PNP epitaxial planar bipolar transistor3.0228 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
2STA1695TO-3PTube--NECEAR99-
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
2STA1695TO-3PIndustrialEcopack1
High power PNP epitaxial planar bipolar transistor 2STA1695