2STA1943:High power PNP epitaxial planar bipolar transistor

This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Key Features

  • High breakdown voltage VCEO > -230V
  • Fast-switching speed
  • Complementary to 2STC5200
  • Typical fT = 30MHz
产品规格
DescriptionVersionSize
DS5348: High power PNP epitaxial planar bipolar transistor2.2183 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
2STA1943TO-264Tube1.29650NECEAR99-
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
2STA1943TO-264IndustrialEcopack1
High power PNP epitaxial planar bipolar transistor 2STA1943