2STC5242:High power NPN epitaxial planar bipolar transistor

This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Key Features

  • High breakdown voltage VCEO = 230V
  • Fast-switching speed
  • Complementary to 2STA1962
  • Typical fT = 30MHz
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
2STC5242TO-3PTube1.16500NECEAR99-
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
2STC5242TO-3PIndustrialEcopack1