The device in a NPN transistor manufactured using new “PB-HCD” (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary PNP is the 2STR2160.
Key Features
| Description | Version | Size |
|---|---|---|
| DS5711: Low voltage fast-switching NPN power transistor | 3.0 | 373 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| 2STR1160 | SOT-23 | Tape And Reel | 0.074 | 500 | NEC | EAR99 | - |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| 2STR1160 | SOT-23 | Industrial | Ecopack2 | md_(n-wspc-sot23-3l_csvx-wspc-ba15s6f.pdf md_(n-wspc-sot23-3l_csvx-wspc-ba15s6f.xml |
