BDX53B:Complementary power Darlington transistors

The devices are manufactured in planar base island technology with monolithic Darlington configuration.

Key Features

  • Good hFE linearity
  • Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
  • High fT frequency
产品规格
DescriptionVersionSize
DS0845: Complementary power Darlington transistors4.283 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
BDX53BTO-220ABTube--NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
BDX53BTO-220ABIndustrialEcopack2md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbb01s6f.pdf
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbb01s6f.xml
Complementary power Darlington transistors BDX54C
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbb01s6f.pdf TIP120
md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbb01s6f.xml TIP120