This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.
Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.
Key Features
| Description | Version | Size |
|---|---|---|
| DS2300: High voltage fast-switching NPN power transistor | 5.1 | 398 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| BUL1102EFP | TO-220FP | Tube | - | - | NEC | EAR99 | CHINA |
| BUL1102E | TO-220AB | Tube | 0.577 | 500 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| BUL1102EFP | TO-220FP | Industrial | Ecopack2 | md_dp-wspc-to-wspc-252-wspc-dpak_todpez61b6f.pdf md_dp-wspc-to-wspc-252-wspc-dpak_todpez61b6f.xml |
| BUL1102E | TO-220AB | Industrial | Ecopack2 |
