BUL1102E:High voltage fast switching NPN power transistor

This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

Thanks to an increased intermediate layer, it has an intrinsic ruggedness which enables the transistor to withstand a high collector current level during breakdown condition, without using the Transil™ protection usually necessary in typical converters for lamp ballast.

Key Features

  • High voltage capability
  • Very high switching speed
产品规格
DescriptionVersionSize
DS2300: High voltage fast-switching NPN power transistor5.1398 KB
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
BUL1102EFPTO-220FPTube--NECEAR99CHINA
BUL1102ETO-220ABTube0.577500NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
BUL1102EFPTO-220FPIndustrialEcopack2md_dp-wspc-to-wspc-252-wspc-dpak_todpez61b6f.pdf
md_dp-wspc-to-wspc-252-wspc-dpak_todpez61b6f.xml
BUL1102ETO-220ABIndustrialEcopack2
High voltage fast-switching NPN power transistor BUL1102E
md_dp-wspc-to-wspc-252-wspc-dpak_todpez61b6f.pdf BUL1102E
md_dp-wspc-to-wspc-252-wspc-dpak_todpez61b6f.xml BUL1102E