LET9180:180W 32V Wideband LDMOS TRANSISTOR

The LET9180 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz.

Key Features

  • Excellent thermal stability
  • Common source configuration push-pull
  • POUT = 180 W with 19 dB gain @ 860 MHz
  • BeO-free package
产品规格
DescriptionVersionSize
DS9702: 180 W, 32 V Wideband LDMOS transistor1.0309 KB
应用手册
DescriptionVersionSize
AN1294: PowerSO-10RF: the first true RF power SMD package3.21 MB
Software Development Tools
型号制造商Description
STSW-RFMOS001STMismatch analysis for RF transistor circuits based on Agilent ADS
STSW-RFMOS002STLarge signal load stability for RF transistors based on Agilnet ADS
样片和购买
型号QuantityUnit Price (US$) *PackagePacking TypeECCN (EU)ECCN (US)Country of Origin
LET9180--M246Loose PieceNECEAR99MOROCCO
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
LET9180M246IndustrialEcopack1
180 W, 32 V Wideband LDMOS transistor LET9180
PowerSO-10RF: the first true RF power SMD package PD54003-E