The device is manufactured in planar technology with “base island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Key Features
| Description | Version | Size |
|---|---|---|
| DS5358: Low voltage PNP power transistor | 4.1 | 407 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| MJD32CT4 | DPAK | Tape And Reel | 0.229 | 500 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| MJD32CT4 | DPAK | Industrial | Ecopack2 | md_dp-wspc-to-wspc-252-wspc-dpak_todp-wspc-bi12t6f.pdf md_dp-wspc-to-wspc-252-wspc-dpak_todp-wspc-bi12t6f.xml |
