PD84008-E：RF Power LDMOS transistor
The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD84008-E’s superior linearity performance makes it an ideal solution for portable radio applications.
The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Key Features
- Excellent thermal stability
- Common source configuration
- POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V
- Plastic package
- ESD protection
- In compliance with the 2002/95/EC european directive
产品规格
应用手册
HW Model & CAD Libraries
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| STSW-RFMOS001 | ST | Mismatch analysis for RF transistor circuits based on Agilent ADS |
| STSW-RFMOS002 | ST | Large signal load stability for RF transistors based on Agilnet ADS |
样片和购买
| 型号 | Quantity | Unit Price (US$)
* | Package | Packing Type | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| PD84008-E | - | - | PowerSO-10RF (formed lead) | Tube | NEC | EAR99 | MOROCCO |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| PD84008-E | PowerSO-10RF (formed lead) | Industrial | Ecopack2 | |
