The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
They use a Cellular Emitter structure to enhance switching speeds.
Key Features
Description | Version | Size |
---|---|---|
DS1161: High voltage fast-switching NPN power transistor | 4.1 | 252 KB |
型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
---|---|---|---|---|---|---|---|
ST13007 | TO-220AB | Tube | 0.259 | 500 | NEC | EAR99 | CHINA |
型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
---|---|---|---|---|
ST13007 | TO-220AB | Industrial | Ecopack2 | md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbv03s6f-wspc-(st13007)-wspc-wcp-wspc-ver2_signed.pdf md_dz-wspc-to-wspc-220-wspc-ab-wspc-non-wspc-isol_tldzbv03s6f-wspc-(st13007)-wspc-wcp-wspc-ver2.xml |