The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance switching speeds.
Key Features
| Description | Version | Size |
|---|---|---|
| DS2303: High voltage fast-switching NPN power transistor | 3.3 | 214 KB |
| 型号 | Package | Packing Type | Unit Price (US$) * | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|---|---|---|---|---|---|---|
| ST13007D | TO-220AB | Tube | 0.27 | 500 | NEC | EAR99 | CHINA |
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|---|---|---|---|
| ST13007D | TO-220AB | Industrial | Ecopack2 |
