STGB20NB41LZ:20 A, 410 V internally clamped IGBT

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.

Key Features

  • HIGH VOLTAGE CLAMPING FEATURE
  • POLYSILICON GATE VOLTAGE DRIVEN
  • LOW ON-VOLTAGE DROP
  • LOW THRESHOLD VOLTAGE
  • HIGH CURRENT CAPABILITY
  • LOW GATE CHARGE
产品规格
DescriptionVersionSize
DS3100: N-channel clamped 20A - D2PAK internally clamped PowerMESH™ IGBT5.3257 KB
应用手册
DescriptionVersionSize
AN484: Car ignition with IGBTs1.2215 KB
Software Development Tools
型号制造商Description
ST-IGBT-FINDERSTIGBT product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityEoff (mJ) (typ) (@ Tc = 125 °C)PTOT (W) (max)ECCN (EU)ECCN (US)Country of Origin
STGB20NB41LZT4D2PAKTape And Reel1.778100018.4200NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STGB20NB41LZT4D2PAKAutomotiveEcopack1
N-channel clamped 20A - D2PAK internally clamped PowerMESH™ IGBT STGB20NB41LZ
Car ignition with IGBTs STGB20N40LZ