STH180N10F3-2：N-channel 100 V, 3.9 mOhm typ., 180 A STripFET F3 Power MOSFET in H2PAK-2 package
This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
Key Features
- Ultra low on-resistence
- 100% avalanche tested
产品规格
应用手册
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STH180N10F3-2 | H2PAK-2 | Tape And Reel | 2.997 | 1000 | NEC | EAR99 | CHINA |
质量和可靠性
