STH310N10F7-2:N-channel 100 V, 1.9 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package

These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Key Features

  • Among the lowest RDS(on) on the market
  • Excellent figure of merit (FoM)
  • Low Crss /Ciss ratio for EMI immunity
  • High avalanche ruggedness
产品规格
DescriptionVersionSize
DS9407: N-channel 100 V, 1.9 mΩ typ.,180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages4.0682 KB
应用手册
DescriptionVersionSize
AN3267: Impact of power MOSFET VGS on buck converter performance1.21 MB
AN4789: Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance1.11006 KB
AN4191: Power MOSFET: Rg impact on applications1.11 MB
AN4390: ST’s MOSFET technologies for uninterruptible power supplies1.11 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STH310N10F7-2 PSpice model1.016 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Products and solutions for solar energy1.01 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STH310N10F7-2H2PAK-2Tape And Reel3.81000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STH310N10F7-2H2PAK-2IndustrialEcopack1md_(9-wspc-h2pak-wspc-hc-wspc-2-3-wspc-leads_r2(9-wspc-od0kb52_vers2_sdm_signed.pdf
md_(9-wspc-h2pak-wspc-hc-wspc-2-3-wspc-leads_r2(9-wspc-od0kb52_vers2_sdm.xml
N-channel 100 V, 1.9 mΩ typ.,180 A, STripFET™ F7 Power MOSFETs in H2PAK-2 and H2PAK-6 packages STH310N10F7-6
Impact of power MOSFET VGS on buck converter performance STL8DN6LF3
Monolithic Schottky diode in ST F7 LV MOSFET technology: improving application performance STH310N10F7-6
Power MOSFET: Rg impact on applications STL8DN6LF3
ST’s MOSFET technologies for uninterruptible power supplies STL8DN6LF3
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Spice model tutorial for Power MOSFETs STH310N10F7-2
Very low drop voltage regulators with inhibit KFXX
Description of UFDFPN5, UFDFPN8 and WFDFPN8 for STMicroelectronics EEPROMs and recommendations for use M95080-DRE
md_(9-wspc-h2pak-wspc-hc-wspc-2-3-wspc-leads_r2(9-wspc-od0kb52_vers2_sdm_signed.pdf STH310N10F7-2
md_(9-wspc-h2pak-wspc-hc-wspc-2-3-wspc-leads_r2(9-wspc-od0kb52_vers2_sdm.xml STH310N10F7-2