STH6N95K5-2：N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFET in a H2PAK-2 package
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Key Features
- Industry’s lowest RDS(on)
x area
- Industry’s best figure of merit (FoM)
- Ultra low gate charge
- 100% avalanche tested
- Zener-protected
产品规格
应用手册
Technical Notes & Articles
用户手册
HW Model & CAD Libraries
手册
Software Development Tools
| 型号 | 制造商 | Description |
|---|
| ST-MOSFET-FINDER | ST | MOSFET product finder application for Android and iOS |
样片和购买
| 型号 | Package | Packing Type | Unit Price (US$)
* | Quantity | ECCN (EU) | ECCN (US) | Country of Origin |
|---|
| STH6N95K5-2 | H2PAK-2 | Tape And Reel | - | - | NEC | EAR99 | CHINA |
质量和可靠性
| 型号 | Package | Grade | RoHS Compliance Grade | Material Declaration** |
|---|
| STH6N95K5-2 | H2PAK-2 | Industrial | Ecopack1 | |
