STL30P3LLH6：P-channel 30 V, 0.024 Ohm typ., 30 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package

This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages.

Key Features

  • RDS(on) * Qg industry benchmark
  • Extremely low on-resistance RDS(on)
  • High avalanche ruggedness
  • Low gate drive power losses
产品规格
DescriptionVersionSize
DS9258: P-channel 30 V, 0.024 Ω typ., 9 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package3.01 MB
应用手册
DescriptionVersionSize
AN1703: Guidelines for using ST's MOSFET smd Packages1.3776 KB
AN4391: New P-channel trench technology from ST for low power DC-DC conversions and load switching applications1.01 MB
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STL30P3LLH6PowerFLAT 5x6Tape And Reel0.721000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STL30P3LLH6PowerFLAT 5x6IndustrialEcopack2
P-channel 30 V, 0.024 Ω typ., 9 A STripFET™ VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package STL30P3LLH6
Guidelines for using ST's MOSFET smd Packages STD26P3LLH6
New P-channel trench technology from ST for low power DC-DC conversions and load switching applications STL6P3LLH6
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
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