STL62P3LLH6：P-channel 30 V, 0.009 Ohm typ., 62 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Very low on-resistance
  • Very low gate charge
  • High avalanche ruggedness
  • Low gate drive power loss
产品规格
DescriptionVersionSize
DS10149: P-channel -30 V, 9 mΩ typ., -62 A STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package6.01 MB
应用手册
DescriptionVersionSize
AN4337: The avalanche issue: comparing the impacts of the IAR and EAS parameters1.1346 KB
用户手册
DescriptionVersionSize
UM1575: Spice model tutorial for Power MOSFETs1.31 MB
HW Model & CAD Libraries
DescriptionVersionSize
STL62P3LLH6 PSpice model1.08 KB
手册
DescriptionVersionSize
Brochure Power management guide05.20167 MB
Software Development Tools
型号制造商Description
ST-MOSFET-FINDERSTMOSFET product finder application for Android and iOS
样片和购买
型号PackagePacking TypeUnit Price (US$) *QuantityECCN (EU)ECCN (US)Country of Origin
STL62P3LLH6PowerFLAT 5x6Tape And Reel1.251000NECEAR99CHINA
质量和可靠性
型号PackageGradeRoHS Compliance GradeMaterial Declaration**
STL62P3LLH6PowerFLAT 5x6IndustrialEcopack2md_d2-wspc-d2pak_r1d2-wspc-vjllb62.pdf
md_d2-wspc-d2pak_r1d2-wspc-vjllb62.xml
Datasheet
P-channel -30 V, 9 mΩ typ., -62 A STripFET™ H6 Power MOSFET in a PowerFLAT 5x6 package STL62P3LLH6
Other
The avalanche issue: comparing the impacts of the IAR and EAS parameters STS7P4LLF6
md_d2-wspc-d2pak_r1d2-wspc-vjllb62.pdf STL62P3LLH6
md_d2-wspc-d2pak_r1d2-wspc-vjllb62.xml STL62P3LLH6
Spice model tutorial for Power MOSFETs STL62P3LLH6
Spice model tutorial for Power MOSFETs SCTWA50N120
Very low drop voltage regulators with inhibit KFXX
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